IRF7401TRPBF by Infineon Technologies

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IRF7401TRPBF

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRF7401TRPBF
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 20 V;
Datasheet

Datasheet

49 In Stock

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IRF7401TRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8.7 A
JEDEC-95 Code:	MS-012AA
Maximum Pulsed Drain Current (IDM):	35 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	ULTRA LOW RESISTANCE
Maximum Drain-Source On Resistance:	.022 ohm
Moisture Sensitivity Level (MSL):	1

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