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| QTY | Unit Price | Ext Price |
| 133 | $0.254 | $33.735 |
IPZ40N04S5L7R4ATMA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIPZ40N04S5L7R4ATMA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 160 A; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 8;
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Datasheet
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DetailsIPZ40N04S5L7R4ATMA1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 40 A |
| Maximum Pulsed Drain Current (IDM): | 160 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0107 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 24 mJ |
| Other Names: | IPZ40N04S5L7R4ATMA1TR SP001153436 IPZ40N04S5L7R4ATMA1DKR IPZ40N04S5L7R4ATMA1CT IPZ40N04S5L7R4ATMA1-ND |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 40 V |
| Reference Standard: | AEC-Q101 |
