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PSMN4R8-100BSE
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ManufacturerNXP Semiconductors
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Manufacturer's Part NumberPSMN4R8-100BSE
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .0048 ohm;
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Datasheet
3055 In Stock
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DetailsPSMN4R8-100BSE Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 542 mJ |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 120 A |
| Maximum Pulsed Drain Current (IDM): | 707 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | PURE TIN |
| No. of Terminals: | 2 |
| Minimum DS Breakdown Voltage: | 100 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Reference Standard: | IEC-60134 |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0048 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
