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PSMN4R8-100BSE

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

PSMN4R8-100BSE
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .0048 ohm;
Datasheet

Datasheet

3055 In Stock

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PSMN4R8-100BSE Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	542 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	707 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	PURE TIN
No. of Terminals:	2
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	IEC-60134
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0048 ohm
Moisture Sensitivity Level (MSL):	1

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