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BSC060N10NS3G
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberBSC060N10NS3G
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 360 A; Terminal Position: DUAL;
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Datasheet
629 In Stock
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DetailsBSC060N10NS3G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 14.9 A |
| Maximum Pulsed Drain Current (IDM): | 360 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 125 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .006 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 230 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 90 A |
| Peak Reflow Temperature (C): | 260 |
