SI7113ADN-T1-GE3 by Vishay Intertechnology

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SI7113ADN-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI7113ADN-T1-GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 100 V;
Datasheet

Datasheet

Not In Stock

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SI7113ADN-T1-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10.8 A
Maximum Pulsed Drain Current (IDM):	20 A
Surface Mount:	YES
No. of Terminals:	5
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-F5
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.132 ohm
Avalanche Energy Rating (EAS):	11.25 mJ
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Peak Reflow Temperature (C):	NOT SPECIFIED

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