IPP120P04P4L03AKSA2 by Infineon Technologies

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IPP120P04P4L03AKSA2

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPP120P04P4L03AKSA2
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 136 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: THROUGH-HOLE;
Datasheet

Datasheet

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IPP120P04P4L03AKSA2 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	480 A
Surface Mount:	NO
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	136 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.0052 ohm
Avalanche Energy Rating (EAS):	78 mJ
Maximum Feedback Capacitance (Crss):	270 pF
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101

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