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IXTK3N250L
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ManufacturerLittelfuse
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Manufacturer's Part NumberIXTK3N250L
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Case Connection: DRAIN; Package Body Material: PLASTIC/EPOXY;
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Datasheet
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DetailsIXTK3N250L Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 3 A |
| Maximum Pulsed Drain Current (IDM): | 8 A |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 417 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | 10 ohm |
| Maximum Feedback Capacitance (Crss): | 63 pF |
| JEDEC-95 Code: | TO-264AA |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 2500 V |
