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IXTK3N250L
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ManufacturerLittelfuse
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Manufacturer's Part NumberIXTK3N250L
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 417 W; Case Connection: DRAIN; Package Body Material: PLASTIC/EPOXY;
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Datasheet
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DetailsIXTK3N250L Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | 3 A |
Maximum Pulsed Drain Current (IDM): | 8 A |
Surface Mount: | NO |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 417 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | 10 ohm |
Maximum Feedback Capacitance (Crss): | 63 pF |
JEDEC-95 Code: | TO-264AA |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 2500 V |