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FDB2710

Manufacturer

Onsemi
Manufacturer's Part Number

FDB2710
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 260 W; Avalanche Energy Rating (EAS): 145 mJ; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet

Datasheet

1810 In Stock

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FDB2710 Technical Details

TYPE	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	50 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	2
Maximum Power Dissipation (Abs):	260 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-XSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0425 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	145 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	250 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	50 A
Peak Reflow Temperature (C):	245

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