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FQP27P06_SW82127
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ManufacturerOnsemi
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Manufacturer's Part NumberFQP27P06_SW82127
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Package Style (Meter): FLANGE MOUNT; Avalanche Energy Rating (EAS): 560 mJ;
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Datasheet
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DetailsFQP27P06_SW82127 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 425 ns |
| Maximum Drain Current (ID): | 27 A |
| Maximum Pulsed Drain Current (IDM): | 108 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | Matte Tin (Sn) |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 120 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 260 ns |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .07 ohm |
| Avalanche Energy Rating (EAS): | 560 mJ |
| Maximum Feedback Capacitance (Crss): | 155 pF |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Maximum Drain Current (Abs) (ID): | 27 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
