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FQP27P06_SW82127

Manufacturer

Onsemi
Manufacturer's Part Number

FQP27P06_SW82127
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Package Style (Meter): FLANGE MOUNT; Avalanche Energy Rating (EAS): 560 mJ;
Datasheet

Datasheet

2499 In Stock

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FQP27P06_SW82127 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	425 ns
Maximum Drain Current (ID):	27 A
Maximum Pulsed Drain Current (IDM):	108 A
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	120 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	260 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.07 ohm
Avalanche Energy Rating (EAS):	560 mJ
Maximum Feedback Capacitance (Crss):	155 pF
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	27 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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