IRF9Z34NSTRLPBF by Infineon Technologies

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IRF9Z34NSTRLPBF

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRF9Z34NSTRLPBF
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE; Transistor Application: SWITCHING;
Datasheet

Datasheet

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IRF9Z34NSTRLPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	19 A
Maximum Pulsed Drain Current (IDM):	68 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN OVER NICKEL
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.1 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	180 mJ
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, HIGH RELIABILITY
Peak Reflow Temperature (C):	260

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