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FDS6982AS

Manufacturer

Onsemi
Manufacturer's Part Number

FDS6982AS
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Maximum Power Dissipation Ambient: 2 W; Maximum Drain Current (ID): 8.6 A;
Datasheet

Datasheet

1758 In Stock

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FDS6982AS Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	34 ns
Maximum Drain Current (ID):	8.6 A
Maximum Pulsed Drain Current (IDM):	30 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	64 ns
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	2 W
Maximum Drain-Source On Resistance:	.0135 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

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