Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
469	$0.073	$34.307

IRLML0040TRPBF

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRLML0040TRPBF
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

469 In Stock

Popular Products

SS14

Sensitron Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

350766-1

TE Connectivity

TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.

Details

1N4148WS

General Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

ABS06-32.768KHZ-T

Abracon

Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.

Details

BAV99

Vishay Intertechnology

Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.

Details

CRCW06030000Z0EAHP

Vishay Intertechnology

Vishay Intertechnology's CRCW06030000Z0EAHP is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating temp range -55 to 155 °C, it's SMT package style makes it ideal for automotive applications meeting AEC-Q200 standard.

Details

M39029/58360

Souriau-sunbank Connection Technologies

Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.

Details

MMBT2222ALT1G

Rochester Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

Details

L7805CV

STMicroelectronics

L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.

Details

1N4148WS

Changzhou Galaxy Century Microelectronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM358MX

Texas Instruments

LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.

Details

LL4148

Bytesonic Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N7002

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

Details

LL4148

Taitron Components

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Unitrode

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

1N4148

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM358DT

ROHM

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;

Details

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

2N2222A

Minilogic Device

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;

Details

ISO1050DUBR

Texas Instruments

ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.

Details

IRLML0040TRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.6 A
Maximum Pulsed Drain Current (IDM):	15 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	1.3 W
Maximum Drain-Source On Resistance:	.056 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	29 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	3.6 A
Peak Reflow Temperature (C):	260

Category Top Products

IRLML5203TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

IRFP4468PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Transistor Application: SWITCHING; JESD-609 Code: e3;

IRFR5305TRLPBF

Infineon Technologies

IRFR5305TRLPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 110A IDM, 280mJ EAS, and 0.065 ohm RDS(on). With a max power dissipation of 110W and operating temperature up to 175°C, it's suitable for high-power electronic systems.

NDT2955

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;

IRF640

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 125 W;

AUIRF540Z

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92 W; Additional Features: AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY; JESD-609 Code: e3;

IPB200N25N3GATMA1

Infineon Technologies

Infineon's IPB200N25N3GATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 0.02 ohm max RDS(on), and 256A IDM. Ideal for switching applications, it operates in enhancement mode with a built-in diode. The transistor features GULL WING terminals, can handle up to 175°C, and has an EAS of 320mJ.

IRFR3710ZTRPBF

Infineon Technologies

IRFR3710ZTRPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 220A and EAS of 150mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 175°C.

IRLR2908TRPBF

Infineon Technologies

Infineon's IRLR2908TRPBF is a N-CHANNEL FET with 80V DS Breakdown Voltage and 150A IDM. Ideal for SWITCHING applications, it features 0.028 ohm RDS(ON) and 120W Pdiss. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR tech, it operates up to 175°C making it suitable for high-power electronics.

IRLML0100TRPBF-1

Infineon Technologies

Infineon's IRLML0100TRPBF-1 is a N-channel Power FET with 100V DS breakdown voltage and 7A IDM. Ideal for enhancement mode operation, it features a built-in diode, 0.22 ohm RDS(on), and is suitable for surface mount applications in power electronics.

SUD50P06-15-GE3

Vishay Intertechnology

Vishay Intertechnology's SUD50P06-15-GE3 is a P-channel Power FET with 60V DS breakdown voltage and 80A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.015 ohm max RDS(on), and operates in enhancement mode.

STP40NF10L

STMicroelectronics

STP40NF10L by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.036 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C temperature.

FQD1N80TM

Onsemi

FQD1N80TM by Onsemi is a N-CHANNEL Power FET with 800V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 4A and EAS of 90mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in small outline designs at up to 150°C.

FDD6637

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;

BSC030P03NS3GAUMA1

Infineon Technologies

BSC030P03NS3GAUMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 200A IDM, and 0.0046 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. The transistor has a small outline package style and can withstand temperatures from -55 to 150 °C.

AUIRFZ44NSTRR

Infineon Technologies

AUIRFZ44NSTRR by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 160A and Max Power Dissipation of 94W. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in various power management systems.

IRF640PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 18 A; Terminal Form: THROUGH-HOLE;

2N7002

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

IRF9540PBF

Vishay Intertechnology

Vishay Intertechnology's IRF9540PBF is a P-CHANNEL FET with 100V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 150W, -55 to 175°C operating temperature range, and 0.2 ohm Drain-Source On Resistance.

IRF7842TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Operating Mode: ENHANCEMENT MODE; Minimum Operating Temperature: -55 Cel;