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SIS413DN-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SIS413DN-T1-GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 5; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet

Datasheet

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SIS413DN-T1-GE3 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	20 mJ
Other Names:	SIS413DN-T1-GE3CT SIS413DN-T1-GE3DKR SIS413DN-T1-GE3TR
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	18 A
Maximum Pulsed Drain Current (IDM):	70 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	5
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-C5
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	C BEND
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.0094 ohm

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