BSZ040N06LS5ATMA1 by Infineon Technologies

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BSZ040N06LS5ATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSZ040N06LS5ATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL; Maximum Drain Current (ID): 17 A;
Datasheet

Datasheet

795 In Stock

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BSZ040N06LS5ATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	17 A
Maximum Pulsed Drain Current (IDM):	160 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.004 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	117 mJ
Other Names:	448-BSZ040N06LS5ATMA1TR BSZ040N06LS5ATMA1-ND 2156-BSZ040N06LS5ATMA1 SP001385578 448-BSZ040N06LS5ATMA1CT ROCINFBSZ040N06LS5ATMA1 448-BSZ040N06LS5ATMA1DKR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V

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