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NTMFS5C604NLT1G

Manufacturer

Onsemi
Manufacturer's Part Number

NTMFS5C604NLT1G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
Datasheet

Datasheet

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NTMFS5C604NLT1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	287 A
Maximum Pulsed Drain Current (IDM):	900 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	5
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0017 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	776 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	287 A
Peak Reflow Temperature (C):	260

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