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STD25NF10LT4

Manufacturer

STMicroelectronics
Manufacturer's Part Number

STD25NF10LT4
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; JEDEC-95 Code: TO-252AA; No. of Elements: 1;
Datasheet

Datasheet

741 In Stock

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STD25NF10LT4 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	60 ns
Maximum Drain Current (ID):	25 A
Maximum Pulsed Drain Current (IDM):	100 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	2
Maximum Power Dissipation (Abs):	100 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	78 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.04 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	450 mJ
Other Names:	497-3156-6 497-3156-2 497-3156-1 497-3156-1-NDR 497-3156-2-NDR
Maximum Feedback Capacitance (Crss):	110 pF
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE ENERGY RATED
Maximum Drain Current (Abs) (ID):	25 A
Peak Reflow Temperature (C):	260

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