Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRLML2502

Manufacturer

International Rectifier Hirel Products
Manufacturer's Part Number

IRLML2502
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 33 A; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
Datasheet

Datasheet

Not In Stock

Popular Products

LL4148

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Gulf Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

BAV99LT1G

Onsemi

BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.

Details

M39029/58-360

Fct Electronic

CONNECTOR ACCESSORY; IEC Conformity: NO; Alternate Contact Sources: MILITARY; MIL Conformity: YES; Contact Gender: MALE; MIL-Connector Accessory Name: CONTACT;

Details

SMBJ18CA

Bytesonic Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1552200168

Molex

WIRE AND CABLE;

Details

2N2222A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

BAV99

Yangzhou Yangjie Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002

Silicon Standard

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

Details

1N4148

Shenzhen Yixinsemi Electronics

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SN6505BDBVR

Texas Instruments

SN6505BDBVR by Texas Instruments is a small outline, low profile interface IC with 6 terminals. It operates b/w -55 to 125°C and supports a max output current of 1.5A at supply voltages ranging from 2.25V to 5.5V. Ideal for military-grade applications requiring compact design and high reliability.

Details

BSS138DW-7-F

Diodes Incorporated

BSS138DW-7-F by Diodes Incorporated is a N-channel small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.2A and a max power dissipation of 0.2W.

Details

MBRA160T3G

Onsemi

MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.

Details

1N4148

Itt Components

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;

Details

1N4148WT

Sangdest Microelectronics (Nanjing)

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

2N7002DWH6327XTSA1

Infineon Technologies

2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.

Details

NE555/D

General Electric Solid State

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;

Details

DS18B20Z

Maxim Integrated

DS18B20Z by Maxim Integrated is a 12-bit digital temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, with ±0.5°C accuracy. Suitable for applications requiring precise temperature monitoring in compact spaces.

Details

SS14

Taitron Components

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

BSS138

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;

Details

IRLML2502 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.2 A
Maximum Pulsed Drain Current (IDM):	33 A
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.045 ohm
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Peak Reflow Temperature (C):	NOT SPECIFIED

Category Top Products

IRF7413ZTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN;

IRFP460

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 20 A;

BSC320N20NS3G

Infineon Technologies

BSC320N20NS3G by Infineon Technologies is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It has a max IDM of 144A and EAS of 190mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it features 0.032 ohm Drain-Source On Resistance and can handle up to 125W power dissipation.

SQ2389ES-T1_GE3

Vishay Intertechnology

Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

NDT3055L

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;

SI4946BEY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI4946BEY-T1-GE3 is an N-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 30A and an avalanche energy rating of 7.2mJ. This transistor is suitable for applications requiring high power dissipation and fast switching times.

DMN6068SE-13

Diodes Incorporated

DMN6068SE-13 by Diodes Inc. is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, 20.8A max pulsed drain current, and 0.068 ohm max drain-source resistance. Suitable for enhancement mode operation in small outline packages at up to 150°C operating temperature.

FQT5P10TF

Onsemi

FQT5P10TF by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 4A IDM and 55mJ EAS. With a small outline package style and matte tin finish, this MOSFET operates in ENHANCEMENT MODE up to 150°C.

BSP320SH6327XTSA1

Infineon Technologies

Infineon's BSP320SH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 11.6A IDM, 0.12 ohm RDS(on), and 150°C Max Operating Temp. Ideal for automotive applications due to AEC-Q101 compliance, it offers high efficiency in compact designs with its small outline package and built-in diode configuration.

FDS6680A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;

IRF7425TRPBF-1

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN; Package Style (Meter): SMALL OUTLINE;

IRFS4010TRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Maximum Operating Temperature: 175 Cel; Package Shape: RECTANGULAR;

FDC5614P

Onsemi

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

FDS8984-F085

Onsemi

FDS8984-F085 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a RECTANGULAR package with GULL WING terminals. With a Max Pulsed Drain Current of 30A and 0.023 ohm Drain-Source On Resistance, it operates in ENHANCEMENT MODE at up to 150°C.

FDD4141-F085P

Onsemi

Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260;

IRF740SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 40 A; Minimum DS Breakdown Voltage: 400 V;

IRF9540NPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Terminal Finish: MATTE TIN OVER NICKEL; Maximum Pulsed Drain Current (IDM): 76 A;

FDS3672_NL

Fairchild Semiconductor

FDS3672_NL by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 7.5A Drain Current, 0.023 ohm On Resistance, and 150°C Operating Temperature. Package: PLASTIC/EPOXY, GULL WING terminals in RECTANGULAR shape.

FDMS86252L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; No. of Elements: 1;

NTF3055L108T1G

Onsemi

NTF3055L108T1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 2.1W and can withstand temperatures up to 175°C.