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IRF540NSTRRPBF

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRF540NSTRRPBF
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Minimum DS Breakdown Voltage: 100 V; Maximum Drain-Source On Resistance: .044 ohm;
Datasheet

Datasheet

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IRF540NSTRRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	33 A
Maximum Pulsed Drain Current (IDM):	110 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN OVER NICKEL
No. of Terminals:	2
Maximum Power Dissipation (Abs):	130 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.044 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	185 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	33 A
Peak Reflow Temperature (C):	260

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