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IRF640
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ManufacturerUnitrode
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Manufacturer's Part NumberIRF640
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JEDEC-95 Code: TO-220AB; Terminal Position: SINGLE;
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Datasheet
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DetailsIRF640 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 18 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 125 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .14 ohm |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e0 |
| Minimum DS Breakdown Voltage: | 200 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 18 A |
