SQ2337ES-T1_GE3 by Vishay Intertechnology

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SQ2337ES-T1_GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SQ2337ES-T1_GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G3;
Datasheet

Datasheet

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SQ2337ES-T1_GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	23 ns
Maximum Drain Current (ID):	2.2 A
Maximum Pulsed Drain Current (IDM):	9 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	39 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.29 ohm
Avalanche Energy Rating (EAS):	6 mJ
Maximum Feedback Capacitance (Crss):	38 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	80 V
Qualification:	Not Qualified
Reference Standard:	AEC-Q101

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