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MSC035SMA170B

Manufacturer

Microchip Technology
Manufacturer's Part Number

MSC035SMA170B
Description

Power Field-Effect Transistors;
Datasheet

Datasheet

Not In Stock

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2N7002

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

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PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

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OPA2277UA/2K5E4

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

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BSS138

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;

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OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;

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DS18B20Z/T&R by Maxim Integrated is a 12-bit digital temperature sensor with a max supply voltage of 5.5V and an accuracy of 0.50°C. It features a 1-Wire interface, operates b/w -55°C to 125°C, and is ideal for applications requiring precise temperature monitoring in compact spaces.

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LM7805CT

National Semiconductor

FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;

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SMBJ18CA

Changzhou Starsea Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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AUIRF7341QTR

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DMP3099L-7

Diodes Incorporated

DMP3099L-7 by Diodes Inc. is a P-channel FET with 30V DS breakdown voltage and 3.8A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.065 ohm. Suitable for surface mount designs with small outline package style.

IRF540NPBF

Infineon Technologies

IRF540NPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 33A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 185mJ Avalanche Energy Rating, and operates in ENHANCEMENT MODE.

FDS4935A

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P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Application: SWITCHING; Terminal Finish: MATTE TIN;

PMV40UN2R

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PMV40UN2R by NXP Semiconductors is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 16A IDM, and 0.044 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor operates in an ENHANCEMENT MODE with a max temperature of 150 °C.

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Fairchild Semiconductor

Fairchild Semiconductor's FDD4685_F085 is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, -55 to 175 °C operating temp range, and 0.027 ohm Drain-Source On Resistance.

IRF3205ZSTRLPBF

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FDD4685

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 205 pF;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; No. of Elements: 1;

NTF6P02T3G

Onsemi

NTF6P02T3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 35A IDM, and 0.05 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 8.3W.

FDD6637

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FDD6637 by Onsemi is a P-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 61mJ, with an ID of 55A and 0.0116 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power switching tasks.

BSZ042N06NSATMA1

Infineon Technologies

Infineon's BSZ042N06NSATMA1 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 160A max pulsed drain current and 0.0042 ohm max drain-source resistance. Operating in enhancement mode, this MOSFET has an operating temperature range of -55 to 150 °C.

MSC035SMA170B

Not In Stock

Popular Products

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Category Top Products

IRFB4227PBF

AUIRF7341QTR

DMP3099L-7

IRF540NPBF

FDS4935A

PMV40UN2R

FDD4685_F085

IRF3205ZSTRLPBF

FDD4685

FDS4675

PSMN5R5-60YS,115

NTF6P02T3G

FDD6637

BSZ042N06NSATMA1

TN2510N8-G

PSMN040-100MSEX

JANTX2N6796

BSZ15DC02KDHXTMA1

FDS8949

G3R350MT12J