BSC014N06NSATMA1 by Infineon Technologies

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BSC014N06NSATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSC014N06NSATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): 30 A;
Datasheet

Datasheet

909 In Stock

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BSC014N06NSATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.00145 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	580 mJ
Other Names:	SP000924886 BSC014N06NSATMA1CT BSC014N06NSATMA1TR BSC014N06NSTR BSC014N06NSDKR-ND BSC014N06NS-ND BSC014N06NSATMA1DKR BSC014N06NSTR-ND BSC014N06NS BSC014N06NSCT-ND BSC014N06NSDKR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V

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