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FQD2N100TM

Manufacturer

Fairchild Semiconductor
Manufacturer's Part Number

FQD2N100TM
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Minimum DS Breakdown Voltage: 1000 V; Avalanche Energy Rating (EAS): 160 mJ;
Datasheet

Datasheet

2239 In Stock

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FQD2N100TM Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.6 A
Maximum Pulsed Drain Current (IDM):	6.4 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	50 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	9 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	160 mJ
Other Names:	FQD2N100TMTR FQD2N100TM-ND FQD2N100TMCT ONSONSFQD2N100TM 2832-FQD2N100TM 2156-FQD2N100TM-OS FQD2N100TMDKR
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	1000 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	1.6 A
Peak Reflow Temperature (C):	260

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