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STD35P6LLF6

Manufacturer

STMicroelectronics
Manufacturer's Part Number

STD35P6LLF6
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Drain Current (Abs) (ID): 35 A; No. of Elements: 1;
Datasheet

Datasheet

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STD35P6LLF6 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	35 A
Maximum Pulsed Drain Current (IDM):	140 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	2
Maximum Power Dissipation (Abs):	70 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.036 ohm
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	35 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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