BSC011N03LSTATMA1 by Infineon Technologies

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BSC011N03LSTATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSC011N03LSTATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; Terminal Position: DUAL;
Datasheet

Datasheet

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BSC011N03LSTATMA1 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	190 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	37 A
Maximum Pulsed Drain Current (IDM):	400 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.0014 ohm
Moisture Sensitivity Level (MSL):	1

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