BSZ100N06LS3GATMA1 by Infineon Technologies

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BSZ100N06LS3GATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSZ100N06LS3GATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Avalanche Energy Rating (EAS): 55 mJ; Maximum Drain-Source On Resistance: .0179 ohm;
Datasheet

Datasheet

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BSZ100N06LS3GATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	20 A
Maximum Pulsed Drain Current (IDM):	80 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	50 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0179 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	55 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE

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