BSZ100N06LS3GATMA1 by Infineon Technologies

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BSZ100N06LS3GATMA1

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part Number
    BSZ100N06LS3GATMA1
  • Description
    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Avalanche Energy Rating (EAS): 55 mJ; Maximum Drain-Source On Resistance: .0179 ohm;
  • Datasheet

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BSZ100N06LS3GATMA1 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 80 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 50 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0179 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 55 mJ
Other Names: BSZ100N06LS3GATMA1DKR
BSZ100N06LS3GATMA1TR
SP000453672
BSZ100N06LS3GATMA1CT
BSZ100N06LS3GINTR-ND
BSZ100N06LS3GINCT-ND
BSZ100N06LS3 G
BSZ100N06LS3GINDKR-ND
BSZ100N06LS3G
BSZ100N06LS3GINTR
BSZ100N06LS3GINCT
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE

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