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STL57N65M5

Manufacturer

STMicroelectronics
Manufacturer's Part Number

STL57N65M5
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Case Connection: DRAIN; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

2700 In Stock

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STL57N65M5 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	960 mJ
Other Names:	497-13520-1 -1138-STL57N65M5CT 497-13520-2 -1138-STL57N65M5DKR -1138-STL57N65M5TR 497-13520-6
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	22 A
Maximum Pulsed Drain Current (IDM):	90 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	650 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PSSO-N4
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.069 ohm

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