IPB64N25S320ATMA1 by Infineon Technologies

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IPB64N25S320ATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPB64N25S320ATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 250 V; Minimum Operating Temperature: -55 Cel; Terminal Position: SINGLE;
Datasheet

Datasheet

439 In Stock

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IPB64N25S320ATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	64 A
Maximum Pulsed Drain Current (IDM):	256 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.02 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	270 mJ
Other Names:	IPB64N25S320ATMA1CT 2156-IPB64N25S320ATMA1TR IPB64N25S320ATMA1TR IPB64N25S320ATMA1DKR SP000876596
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	250 V
Reference Standard:	AEC-Q101

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