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BSP318SH6327

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSP318SH6327
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Drain Current (ID): 2.6 A; Transistor Element Material: SILICON;
Datasheet

Datasheet

379 In Stock

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BSP318SH6327 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	60 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	2.6 A
Maximum Pulsed Drain Current (IDM):	10.4 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.15 ohm

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