BSP318SH6327XTSA1 by Infineon Technologies

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BSP318SH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSP318SH6327XTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Operating Mode: ENHANCEMENT MODE; Terminal Finish: TIN;
Datasheet

Datasheet

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BSP318SH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	2.6 A
Maximum Pulsed Drain Current (IDM):	10.4 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.15 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	60 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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