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NTD5867NLT4G

Manufacturer

Onsemi
Manufacturer's Part Number

NTD5867NLT4G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36 W; Maximum Drain-Source On Resistance: .05 ohm; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

865 In Stock

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NTD5867NLT4G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	19.1 ns
Maximum Drain Current (ID):	20 A
Maximum Pulsed Drain Current (IDM):	76 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	36 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	20.6 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	36 W
Maximum Drain-Source On Resistance:	.05 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	18 mJ
Other Names:	2156-NTD5867NLT4G-OS ONSNTD5867NLT4G NTD5867NLT4G-ND NTD5867NLT4GOSDKR NTD5867NLT4GOSTR 2832-NTD5867NLT4GTR NTD5867NLT4GOSCT
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	20 A
Peak Reflow Temperature (C):	260

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