BSC016N06NSATMA1 by Infineon Technologies

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BSC016N06NSATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSC016N06NSATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 139 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
Datasheet

Datasheet

284 In Stock

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BSC016N06NSATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	400 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	139 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0016 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	380 mJ
Other Names:	BSC016N06NSDKR BSC016N06NSTR BSC016N06NSCT-ND BSC016N06NSTR-ND SP000924882 BSC016N06NSDKR-ND BSC016N06NS BSC016N06NSATMA1DKR BSC016N06NS-ND BSC016N06NSATMA1TR BSC016N06NSATMA1CT
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	100 A

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