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JANTX2N6796

Manufacturer

Harris Semiconductor
Manufacturer's Part Number

JANTX2N6796
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Form: WIRE; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
Datasheet

Datasheet

936 In Stock

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JANTX2N6796 Technical Details

TYPE	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	105 ns
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	32 A
Surface Mount:	NO
No. of Terminals:	3
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Maximum Turn Off Time (toff):	85 ns
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	25 W
Maximum Drain-Source On Resistance:	.18 ohm
Maximum Feedback Capacitance (Crss):	150 pF
JEDEC-95 Code:	TO-205AF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Additional Features:	RADIATION HARDENED
Reference Standard:	MILITARY STANDARD (USA)

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