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SI7155DP-T1-GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSI7155DP-T1-GE3
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; JESD-30 Code: R-PDSO-F5; Transistor Application: SWITCHING;
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Datasheet
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DetailsSI7155DP-T1-GE3 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 116 ns |
| Maximum Drain Current (ID): | 100 A |
| Maximum Pulsed Drain Current (IDM): | 200 A |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 104 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 420 ns |
| JESD-30 Code: | R-PDSO-F5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0046 ohm |
| Avalanche Energy Rating (EAS): | 125 mJ |
| Other Names: | SI7155DP-T1-GE3DKR SI7155DP-GE3 SI7155DP-T1-GE3CT SI7155DP-T1-GE3TR |
| Maximum Feedback Capacitance (Crss): | 1370 pF |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 40 V |
| Maximum Drain Current (Abs) (ID): | 100 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
