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JANTX2N6796

Manufacturer

Defense Logistics Agency
Manufacturer's Part Number

JANTX2N6796
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .18 ohm; Maximum Pulsed Drain Current (IDM): 32 A; Package Body Material: METAL;
Datasheet

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JANTX2N6796 Technical Details

TYPE	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8 A
JEDEC-95 Code:	TO-205AF
Maximum Pulsed Drain Current (IDM):	32 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	100 V
Qualification:	Qualified
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.18 ohm

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