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CSD16301Q2

Manufacturer

Texas Instruments
Manufacturer's Part Number

CSD16301Q2
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;
Datasheet

Datasheet

Not In Stock

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CSD16301Q2 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	5 A
Maximum Pulsed Drain Current (IDM):	20 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	6
Maximum Power Dissipation (Abs):	2.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.034 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	10 mJ
Maximum Feedback Capacitance (Crss):	17 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	25 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	5 A
Peak Reflow Temperature (C):	260

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