SQJ479EP-T1_GE3 by Vishay Intertechnology

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SQJ479EP-T1_GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SQJ479EP-T1_GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; JESD-609 Code: e3; Package Shape: RECTANGULAR;
Datasheet

Datasheet

Not In Stock

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SQJ479EP-T1_GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	32 A
Maximum Pulsed Drain Current (IDM):	100 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.033 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	80 mJ
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	80 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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