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IAUT300N10S5N015ATMA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIAUT300N10S5N015ATMA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): SMALL OUTLINE;
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Datasheet
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DetailsIAUT300N10S5N015ATMA1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 44 ns |
| Maximum Drain Current (ID): | 300 A |
| Maximum Pulsed Drain Current (IDM): | 1200 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 375 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 118 ns |
| JESD-30 Code: | R-PSSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0015 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 652 mJ |
| Other Names: | IAUT300N10S5N015ATMA1TR IAUT300N10S5N015CT IAUT300N10S5N015 IAUT300N10S5N015ATMA1DKR SP001416130 IAUT300N10S5N015DKR IAUT300N10S5N015ATMA1-ND IAUT300N10S5N015TR-ND IAUT300N10S5N015DKR-ND IAUT300N10S5N015TR IAUT300N10S5N015ATMA1CT IAUT300N10S5N015CT-ND |
| Maximum Feedback Capacitance (Crss): | 126 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Reference Standard: | AEC-Q101 |