SI2319CDS-T1-BE3 by Vishay Intertechnology

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SI2319CDS-T1-BE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI2319CDS-T1-BE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Minimum Operating Temperature: -55 Cel; Maximum Drain Current (ID): 4.4 A;
Datasheet

Datasheet

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SI2319CDS-T1-BE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	34 ns
Maximum Drain Current (ID):	4.4 A
Maximum Pulsed Drain Current (IDM):	20 A
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	46 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.077 ohm
Maximum Feedback Capacitance (Crss):	61 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	IEC-61249-2-21

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