DMN6068SE-13 by Diodes Incorporated

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DMN6068SE-13

Manufacturer

Diodes Incorporated
Manufacturer's Part Number

DMN6068SE-13
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; JESD-30 Code: R-PDSO-G4; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

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DMN6068SE-13 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.1 A
Maximum Pulsed Drain Current (IDM):	20.8 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	3.7 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.068 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	37.5 mJ
Other Names:	DMN6068SE-13TR DMN6068SE-13DKR DMN6068SE-13CT DMN6068SE13
JEDEC-95 Code:	TO-261AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	5.6 A
Peak Reflow Temperature (C):	260

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