BSP295H6327XTSA1 by Infineon Technologies

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BSP295H6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSP295H6327XTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain Current (ID): 1.8 A; Maximum Drain-Source On Resistance: .5 ohm;
Datasheet

Datasheet

994 In Stock

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BSP295H6327XTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	1.8 A
Maximum Pulsed Drain Current (IDM):	7.2 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.5 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	BSP295H6327XTSA1TR SP001058618 BSP295H6327XTSA1CT BSP295H6327XTSA1DKR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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