IRFZ44NS by Transys Electronics

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRFZ44NS

  • Manufacturer
    Transys Electronics
  • Manufacturer's Part Number
    IRFZ44NS
  • Description
    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 55 V; Terminal Form: GULL WING; No. of Terminals: 2;
  • Datasheet

Not In Stock

Please provide a valid Quantity between 1 and 1000,000,000.
Please provide a valid Email Address.

Popular Products

IRFZ44NS Technical Details

TYPE DESCRIPTION
Avalanche Energy Rating (EAS): 150 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 49 A
Maximum Pulsed Drain Current (IDM): 68 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 2
Minimum DS Breakdown Voltage: 55 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0175 ohm

Category Top Products