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IPT012N08N5ATMA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIPT012N08N5ATMA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Form: FLAT; JESD-609 Code: e3;
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Datasheet
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DetailsIPT012N08N5ATMA1 Technical Details
TYPE | DESCRIPTION |
---|---|
Avalanche Energy Rating (EAS): | 817 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 52 A |
Maximum Pulsed Drain Current (IDM): | 1200 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN |
JESD-609 Code: | e3 |
No. of Terminals: | 2 |
Minimum DS Breakdown Voltage: | 80 V |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-F2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0012 ohm |
Moisture Sensitivity Level (MSL): | 1 |