IPT012N08N5ATMA1 by Infineon Technologies

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IPT012N08N5ATMA1

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part Number
    IPT012N08N5ATMA1
  • Description
    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Terminal Form: FLAT; JESD-609 Code: e3;
  • Datasheet

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IPT012N08N5ATMA1 Technical Details

TYPE DESCRIPTION
Avalanche Energy Rating (EAS): 817 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 52 A
Maximum Pulsed Drain Current (IDM): 1200 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 2
Minimum DS Breakdown Voltage: 80 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0012 ohm
Moisture Sensitivity Level (MSL): 1

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