IPB017N10N5LFATMA1 by Infineon Technologies

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IPB017N10N5LFATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPB017N10N5LFATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 313 W; Minimum Operating Temperature: -55 Cel; Case Connection: DRAIN;
Datasheet

Datasheet

262 In Stock

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IPB017N10N5LFATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	180 A
Maximum Pulsed Drain Current (IDM):	720 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	313 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0017 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	979 mJ
Other Names:	IPB017N10N5LFATMA1DKR IPB017N10N5LFATMA1CT SP001503850 IPB017N10N5LFATMA1-ND IPB017N10N5LFATMA1TR
JEDEC-95 Code:	TO-263
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Maximum Drain Current (Abs) (ID):	180 A

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