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VNB35N07-E

Manufacturer

STMicroelectronics
Manufacturer's Part Number

VNB35N07-E
Description

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 2; Minimum DS Breakdown Voltage: 60 V;
Datasheet

Datasheet

Not In Stock

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VNB35N07-E Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	800 ns
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	2
Minimum DS Breakdown Voltage:	60 V
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	1350 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	35 A
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.035 ohm

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