IRLML6401GTRPBF by Infineon Technologies

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IRLML6401GTRPBF

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRLML6401GTRPBF
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Terminals: 3; Maximum Drain-Source On Resistance: .05 ohm;
Datasheet

Datasheet

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IRLML6401GTRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	43 ns
Maximum Drain Current (ID):	4.3 A
Maximum Pulsed Drain Current (IDM):	34 A
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	460 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.05 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	33 mJ
Maximum Feedback Capacitance (Crss):	125 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	12 V
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	4.3 A

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