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IRFZ44NLPBF
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIRFZ44NLPBF
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Avalanche Energy Rating (EAS): 150 mJ; Maximum Drain Current (ID): 49 A;
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Datasheet
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DetailsIRFZ44NLPBF Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 49 A |
Maximum Pulsed Drain Current (IDM): | 160 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN OVER NICKEL |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 94 W |
Terminal Position: | SINGLE |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PSIP-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0175 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 150 mJ |
JEDEC-95 Code: | TO-262AA |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 55 V |
Qualification: | Not Qualified |
Additional Features: | AVALANCHE RATED, HIGH RELIABILITY |
Maximum Drain Current (Abs) (ID): | 49 A |
Peak Reflow Temperature (C): | 260 |