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2N2222A
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ManufacturerNew England Semiconductor
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Manufacturer's Part Number2N2222A
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DescriptionNPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
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Datasheet
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Details2N2222A Technical Details
TYPE | DESCRIPTION |
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Nominal Transition Frequency (fT): | 300 MHz |
Package Body Material: | METAL |
Maximum Collector Current (IC): | .8 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Maximum Turn On Time (ton): | 35 ns |
Sub-Category: | Other Transistors |
Surface Mount: | NO |
Terminal Finish: | Tin/Lead (Sn/Pb) |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | .5 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
Maximum Turn Off Time (toff): | 285 ns |
JESD-30 Code: | O-MBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Maximum Operating Temperature: | 200 Cel |
JEDEC-95 Code: | TO-18 |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 75 |
JESD-609 Code: | e0 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 40 V |
Maximum Collector-Base Capacitance: | 8 pF |
Maximum VCEsat: | .3 V |