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PMV40UN2R

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

PMV40UN2R
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5 W; JESD-609 Code: e3; No. of Elements: 1;
Datasheet

Datasheet

3191 In Stock

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PMV40UN2R Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	3.7 A
Maximum Pulsed Drain Current (IDM):	16 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.044 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	35 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	30 V
Reference Standard:	IEC-60134
Maximum Drain Current (Abs) (ID):	4.4 A
Peak Reflow Temperature (C):	260

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