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NVF2955T1G

Manufacturer

Onsemi
Manufacturer's Part Number

NVF2955T1G
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Peak Reflow Temperature (C): 260; Avalanche Energy Rating (EAS): 225 mJ;
Datasheet

Datasheet

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NVF2955T1G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.7 A
Maximum Pulsed Drain Current (IDM):	17 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	4
Maximum Power Dissipation (Abs):	2.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.185 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	225 mJ
JEDEC-95 Code:	TO-261AA
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	2.6 A
Peak Reflow Temperature (C):	260

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